SANTA CLARA, Calif., Sept. 20, 2005 - Intel Corporation is developing an ultra-low power derivative of its high-performance 65 nanometer (nm) logic manufacturing process that will enable production of very low-power chips for mobile platforms and small-form factor devices. The ultra-low power process will be Intel's second process based on 65 nm process technology.
Intel's high-performance 65nm (a nanometer is one-billionth of a meter) process provides both power consumption and performance benefits over Intel's current industry-leading 90nm manufacturing process. The company's new ultra-low power 65nm process provides Intel chip designers additional options in delivering the circuit density, performance and power consumption required by users of battery-operated devices...
Intel's ultra-low power, 65nm process technology includes several key transistor modifications which enable delivery of low power benefits while providing industry-leading performance. These transistor modifications result in significant reductions in the three major sources of transistor leakage: sub-threshold leakage, junction leakage and gate oxide leakage. The benefits of reduced transistor leakage are lower power and increased battery life.
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